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Czochralski Crystal Growth Technique

This technique originates from pioneering work by Czochralski in 1917 who pulled single crystals of metals. Since crystal pulling was first developed as a technique for growing single crystals, it has been used to grow germanium and silicon and extended to grow a wide range of compound semiconductors, oxides, metals, and halides. It is the dominant technique for the commercial production of most of these materials.

Facilities

  • 50 kW induction heated Cz system: Automatic diameter control
  • High Pressure Cz system: 10 KW induction heated, controlled atmosphere
  • Low temperature automatic diameter controlled CZ system for organic crystals

Crystals using this technique grown in our Lab.:

  • Pure and doped BSO
  • Pure and doped LiNbO3
  • YAlO3, YLF

Related publications

  1. Investigations of charge transfer and photosensitivity in single and double doped LiNbO3 single crystals, an optical electron paramagnetic resonance study(Part I), SPIE-The International Society for Optical Engineering, 1997, in press.
  2. Czochralski crystal-growth system with Diameter Control, NASA Tech Briefs, 21, p10a, 1997.
  3. Photoinduced charge in BSO:Cr3+ homegrown single crystal at room temperature during grating formation under Ar+ laser illumination in EPR experiment, SPIE-The International Society for Optical Engineering, 2849, pp 67-78, 1997.
  4. A Versatile Czochralski crystal growth system with automatic diameter control., Rev. Sci. Instrum., 66(7), pp 3939-3942, 1995.
  5. The precision polishing of Bismuth Silicate and Bismuth Germanate, Optics & Photonics News, 5(2), pp S1-S2, 1994.
  6. Morphology and formation of the color core of Bi12SiO20 crystals grown by the Czochralski method., J. of Crystal Growth., 137, pp 132-135, 1994.
  7. Observations on the polishing of Bismuth Silicon Oxide crystals, J. of Optics 23(4), pp 179-185, 1994.
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